Three-terminal semiconductor junction thermoelectric devices: improving performance
نویسندگان
چکیده
منابع مشابه
Three-terminal semiconductor junction thermoelectric devices: improving performance
A three-terminal thermoelectric device based on a p–i–n semiconductor junction is proposed, where the intrinsic region is mounted onto what is typically a bosonic thermal terminal. Remarkably, the figure of merit of the device is governed also by the energy distribution of the bosons participating in the transport processes, in addition to the electronic. An enhanced figure of merit can be obta...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2013
ISSN: 1367-2630
DOI: 10.1088/1367-2630/15/7/075021